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ZVP4424G
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP
MAX. UNIT
CONDITIONS.
Drain-Source Breakdown
Voltage
BV DSS
-240
V
I D =-1mA, V GS =0V
Gate-Source Threshold
Voltage
Gate-Body Leakage
Zero Gate Voltage Drain
Current
On-State Drain Current
Static Drain-Source
On-State Resistance
Forward
Transconductance (1) (2)
Input Capacitance (2)
Common Source Output
Capacitance (2)
Reverse Transfer
Capacitance (2)
Turn-On Delay Time (2)(3)
Rise Time (2)(3)
Turn-Off Delay Time (2)(3)
Fall Time (2)(3)
V GS(th)
I GSS
I DSS
I D(on)
R DS(on)
g fs
C iss
C oss
C rss
t d(on)
t r
t d(off)
t f
-0.7
-0.75
125
-1.4
-1.0
7.1
8.8
100
18
5
8
8
26
20
-2.0
100
-10
-100
9
11
200
25
15
15
15
40
30
V
nA
μ A
μ A
A
?
?
mS
pF
pF
pF
ns
ns
ns
ns
I D =-1mA, V DS = V GS
V GS = ± 40V, V DS =0V
V DS =-240V, V GS =0V
V DS =-190V, V GS =0V, T=125°C
V DS =-10V, V GS =-10V
V GS =-10V, I D =-200mA
V GS =-3.5V, I D =-100mA
V DS =-10V,I D =-0.2A
V DS =-25V, V GS =0V, f=1MHz
V DD ≈? 50V, I D =-0.25A,
V GEN =-10V
(1) Measured under pulsed conditions. Width=300 μ s. Duty cycle ≤ 2%
(2) Sample test.
(3) Switching times measured with 50 ? source impedance and <5ns rise time on a pulse generator
Spice parameter data is available upon request for this device
TYPICAL CHARACTERISTICS
C
C
Note:V
0V
V = -20V
-50V
-100V
C
Note:I
0.25A
V
-Drain Source Voltage (Volts)
Q-Gate Charge (nC)
Capacitance v drain-source voltage
3 - 439
Gate charge v gate-source voltage
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